MCH5834 no. a0558-1/6 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena0558 MCH5834 mosfet : n-channel silicon mosfet sbd : schottky barrier diode general-purpose switching device applications sanyo semiconductors data sheet features ? composite type with an n-channel silicon mosfet (mch3435) and a schottky barrier diode (ss0503sh) contained in one package facilitating high-density mounting. [mosfet] ? low on-resistance. ? ultrahigh-speed switching. ? 1.5v drive. [sbd] ? short reverse recovery time. ? low forward voltage. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss 30 v gate-to-source voltage (*1) v gss 10 v drain current (dc) i d 0.7 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 2.8 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm) 1unit 0.6 w channel temperature tch 150 c storage temperature tstg --55 to +125 c [sbd] repetitive peak reverse voltage v rrm 30 v nonrepetitive peak reverse surge voltage v rsm 30 v average output current i o 0.5 a surge forward current i fsm 50hz sine wave, 1 cycle 5 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c marking : xy (*1) : note, when designing a circuit using this it has a gate (oxide film) protection diode connected only between its gate an d source. any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. n0806pe sy im tc-00000259
MCH5834 no. a0558-2/6 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 m a gate-to-source leakage current i gss v gs =8v, v ds =0v 1 m a cutoff voltage v gs (off) v ds =10v, i d =100 m a 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =350ma 0.45 0.8 s r ds (on)1 i d =350ma, v gs =4v 0.7 0.9 w static drain-to-source on-state resistance r ds (on)2 i d =200ma, v gs =2.5v 0.8 1.15 w r ds (on)3 i d =10ma, v gs =1.5v 1.6 2.4 w input capacitance ciss v ds =10v, f=1mhz 30 pf output capacitance coss v ds =10v, f=1mhz 7 pf reverse transfer capacitance crss v ds =10v, f=1mhz 3.5 pf turn-on delay time t d (on) see specified test circuit. 8 ns rise time t r see specified test circuit. 6 ns turn-off delay time t d (off) see specified test circuit. 10 ns fall time t f see specified test circuit. 8 ns total gate charge qg v ds =10v, v gs =4v, i d =700ma 1 nc gate-to-source charge qgs v ds =10v, v gs =4v, i d =700ma 0.4 nc gate-to-drain miller charge qgd v ds =10v, v gs =4v, i d =700ma 0.2 nc diode forward voltage v sd i s =700ma, v gs =0v 0.93 1.2 v [sbd] reverse voltage v r i r =0.5ma 15 v forward voltage v f 1i f =0.3a 0.37 0.42 v v f 2i f =0.5a 0.42 0.47 v reverse current i r v r =15v 120 m a interterminal capacitance c v r =10v, f=1mhz 13 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 10 ns package dimensions electrical connection unit : mm (typ) 7021a-008 5 2 4 13 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain top view 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain sanyo : mcph5 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 54 123 54 123
MCH5834 no. a0558-3/6 pw=10 m s d.c. 1% p. g 50 w g s d i d =350ma r l =42 w v dd =15v v out MCH5834 v in 4v 0v v in duty 10% 50 w 100 w 10 w --5v t rr 100ma 100ma 10ma 10 m s switching time test circuit t rr test circuit [mosfet] [sbd] i d -- v ds it07510 i d -- v gs it07511 0.1 0.5 0 0.2 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 6.0v 4.0v 3.5v 3.0v 2.5v 2.0v v gs =1.5v 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 ta= --25 c --25 c 25 c 25 c ta=75 c 75 c v ds =10v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a r ds (on) -- v gs it09241 r ds (on) -- ta it09242 1.0 0 1.0 0 2.0 3.0 4.0 5.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ta=25 c i d =200ma 350ma --40 --60 --20 0 20 40 60 80 100 120 140 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i d =200ma, v gs =2.5v i d =350ma, v gs =4.0v gate-to-source voltage, v gs -- v ambient temperature, ta -- c static drain-to-source on-state resistance, r ds (on) -- w static drain-to-source on-state resistance, r ds (on) -- w [mosfet] [mosfet] [mosfet] [mosfet]
MCH5834 no. a0558-4/6 030 10 15 20 25 5 ciss, coss, crss -- v ds it09243 2 0.1 23 1.0 5 7 2 10 3 5 7 3 0 60 50 20 30 10 40 sw time -- i d it07516 it07515 i s -- v sd it07514 0.01 0.1 0.1 23 57 23 57 1.0 7 5 3 3 2 2 7 5 1.0 ? y fs ? -- i d 0.8 1.0 0.6 1.2 1.4 0.4 0.2 0.01 1.0 0.1 7 5 3 2 7 5 3 3 2 2 v ds =10v 25 c ta= --25 c 75 c v gs =0v --25 c 25 c v dd =15v v gs =4v t d (off) t f t d (on) t r crss coss ciss f=1mhz ta= 75 c 0 0 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v gs -- qg it09244 r ds (on) -- i d 3 5 7 1.0 2 3 23 57 23 57 0.01 0.1 1.0 it07519 v ds =10v i d =0.7a ta= 75 c 25 c -- 25 c v gs =4v drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns total gate charge, qg -- nc gate-to-source voltage, v gs -- v forward transfer admittance, ? y fs ? -- s drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w it07520 it07521 r ds (on) -- i d 3 5 7 1.0 2 3 23 57 23 57 0.01 0.1 1.0 ta= 75 c -- 25 c 25 c v gs =2.5v r ds (on) -- i d 5 7 2 3 1.0 5 7 23 57 23 0.01 0.1 v gs =1.5v ta= 75 c -- 25 c 25 c drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- w [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet]
MCH5834 no. a0558-5/6 0 0 20 40 60 80 100 120 0.2 0.4 0.6 0.8 140 160 it11803 2 3 5 7 2 3 5 7 2 5 3 1.0 0.1 0.01 1.0 23 57 0.1 23 57 10 25 3 it11802 operation in this area is limited by r ds (on). 300 m s 100ms 1ms 10ms 10 m s dc operation ( ta=25 c) i dp =2.8a i d =0.7a 0 0 0.1 0.2 0.3 0.35 0.25 0.15 0.1 0.05 0.2 0.3 0.4 0.5 0.6 it08187 (2) (4) (3) (1) reverse voltage, v r -- v i r -- v r reverse current, i r -- m a forward voltage, v f -- v forward current, i f -- a i f -- v f 10 2 3 5 7 3 5 7 100 0.1 1.0 23 57 10 23 5 23 5 77 reverse voltage, v r -- v c -- v r interterminal capacitance, c -- pf average output current, i o -- a p f (av) -- i o average forward power dissipation, p f (av) -- w it07891 f=1mhz q 360 rectangular wave 180 360 sine wave (1)rectangular wave q =60 (2)rectangular wave q =120 (3)rectangular wave q =180 (4)sine wave q =180 0 1.0 0.1 0.01 0.3 0.4 0.1 0.2 7 5 3 2 7 5 3 2 0.6 0.5 ta=125 c 100 c 75 c 50 c 25 c it07927 it07928 0 1.0 2 5 3 7 2 5 3 7 2 5 3 7 2 5 3 7 2 5 3 7 10 100 1000 100000 10000 510 30 15 20 25 ta=125 c 25 c 50 c 75 c 100 c 7 0.01 23 7 0.1 0 52 2 37 1.0 5 7 5 6 4 3 2 1 3 time, t -- s i fsm -- t surge forward current, i fsm (peak) -- a id00387 i s 20ms t current waveform 50hz sine wave [sbd] [sbd] [sbd] [sbd] [sbd] p d -- ta a s o drain-to-source voltage, v ds -- v drain current, i d -- a ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm) 1unit ambient temperature, ta -- c allowable power dissipation, p d -- w mounted on a ceramic board (900mm 2 5 0.8mm) 1unit [mosfet] [mosfet]
MCH5834 no. a0558-6/6 specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ps note on usage : since the MCH5834 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. this catalog provides information as of november, 2006. specifications and information herein are subject to change without notice.
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